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Generation and recombination rates at ZnTe:O intermediate band states
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10.1063/1.3274131
/content/aip/journal/apl/95/26/10.1063/1.3274131
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3274131

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic energy band diagram for ZnTe:O and illustration of optical transitions and (b) room temperature PL spectra for ZnTe:N, ZnTe:NO, and ZnTe:O samples.

Image of FIG. 2.
FIG. 2.

Time-resolved PL of ZnTe:NO at 700 nm.

Image of FIG. 3.
FIG. 3.

Excitation-dependent TRPL of (a) ZnTe:O at 700 nm and (b) resulting carrier lifetime time constants.

Image of FIG. 4.
FIG. 4.

Simulated effective carrier lifetime for electrons at the CB and IB for varying injection.

Tables

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Table I.

Doping concentration, TRPL measurement conditions for 550 and 700 nm emissions, and measured lifetimes of ZnTe:N, ZnTe:NO, and ZnTe:O samples.

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/content/aip/journal/apl/95/26/10.1063/1.3274131
2009-12-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Generation and recombination rates at ZnTe:O intermediate band states
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3274131
10.1063/1.3274131
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