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Room temperature CER spectra for the set of GaInNAs/GaAs QWs obtained at various As/III pressure ratios. The plasma settings are 205 W rf power and 0.2 SCCM flow. Arrows show the calculated energies of optical transition for this QW. The notation denotes the transition between heavy(light) hole subband and conduction subband.
Room temperature CER spectra for the set of GaInNAs/GaAs QWs obtained at low As pressure and various nitrogen plasma settings.
Room temperature CER spectrum for GaInNAs/GaAs QW sample obtained at low As/III pressure and nitrogen plasma settings of 275 W rf power and 0.25 SCCM flow in the vicinity of the fundamental QW transition together with the fitting curve (gray line) and the decomposition of CER signal for individual modulus of CER resonances (dashed lines).
intensity ratio obtained from the fitting of CER data by Eq. (1).
Room temperature CER for as-grown and annealed GaInNAs/GaAs QW samples obtained at various As/III BEP ratios: (a) (nitrogen plasma settings 275 W rf power and 0.25 SCCM flow), (b) , (c) , and (d) . Nitrogen plasma settings for (b), (c), and (d) are the same and equal 205 W rf power and 0.2 SCCM flow.
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