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(a) Room temperature (300 K) and (b) low temperature (10 K) PL spectra of AlN hetero-epilayer, polycrystalline AlN, and bulk AlN single crystal under above band-gap excitation scheme with 197 nm laser.
Low temperature (10 K) PL spectra of AlN hetero-epilayer, polycrystalline AlN, and bulk AlN single crystal under: (a) above (197 nm) and (b) below (262 nm) band gap excitation.
(a) Temperature dependent PL spectra of bulk m-AlN around 2.78 eV with 262 nm excitation from 10 to 400 K. (b) The Arrhenius plot of the PL intensity of 2.78 eV emission line in m-AlN bulk.
(a) Excitation intensity dependent PL spectra measured on bulk m-AlN single crystal around 2.73 eV emission line with 197 nm excitation. (b) Peak emission intensity at 2.73 eV as a function of excitation intensity.
Energy level diagram of isolated aluminum vacancies in AlN including the two charge states, and , of level with a small lattice relaxation (SLR) between these two states.
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