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Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization
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/content/aip/journal/apl/95/26/10.1063/1.3276694
2009-12-31
2014-09-22

Abstract

We demonstrate an approach to improve poly-3-hexylthiophene field effect transistors by modifying the gold contacts with monolayer thick pentacenequinone (PQ) or naphthalene (NL). The effective contact resistance is reduced by a factor of two and sixteen for interlayers of PQ and NL, respectively. The observation is attributed to different injection barriers at the metal-organic interface caused by the functionalization and to an additional tunneling barrier enhancing the on/off ratios. This barrier yields to activation energies of 37 meV (NL) and 104 meV (PQ) below 190 K, which are smaller than without functionalization, 117 meV.

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Scitation: Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3276694
10.1063/1.3276694
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