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Hall resistivity up to 30 T at RT for four samples, varying in thickness. The inset shows the effective density of electrons at the maximum field. The value associated to per f.u. is marked by a dashed line.
Hall resistivity up to 30 T for temperatures above the Verwey transition, measured in a lithographically patterned 40 nm thick sample.
MR up to 30 T in a lithographically patterned 40 nm thick sample for temperatures above and below the Verwey transition, with the magnetic field applied perpendicular to the substrate plane. The inset shows the absolute MR at 30 T as a function of temperature, with a maximum value of 20% at .
Electrical conduction properties of epitaxial thin films. The first four rows refer to the van der Pauw measurements at RT, varying the sample thickness. The last four rows are obtained for a 40 nm thick lithographically patterned sample as a function of temperature . The effective quantities are derived from the slope at 30 T.
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