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Plasma-assisted molecular beam epitaxy of high quality thin films on Y-stabilized using In as an auto surfactant
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View: Figures


Image of FIG. 1.
FIG. 1.

Representative RHEED images observed during the growth of thin films on YSZ(001) taken in the (top) and (bottom) azimuth under oxygen-rich (red solid frame) and indium-rich (blue dotted frame) growth conditions. The shadow edge is at the top of the images.

Image of FIG. 2.
FIG. 2.

Growth diagram giving the growth rate as a function of oxygen BEP at a constant In BEP of . The solid lines are guides to the eyes. Datapoint labels denote the rms-roughness (nm) of the film surface. Inset: Growth rate as function of In BEP for constant oxygen BEP of .

Image of FIG. 3.
FIG. 3.

Morphology of the sample surfaces of S1 (top), S2 (center), S3 (bottom) represented by cross-sectional SEM images with 5° tilt (left), the RHEED patterns at the end of the growth (left inset), and AFM images (right). The 500 nm scale bar and the horizontal [100] direction arrow apply to AFM and SEM images. Sample description and AFM height scale are given on top of the AFM images.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma-assisted molecular beam epitaxy of high quality In2O3(001) thin films on Y-stabilized ZrO2(001) using In as an auto surfactant