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Probing of carrier behavior in organic electroluminescent diode using electric field induced optical second-harmonic generation measurement
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By using the electric field induced optical second-harmonic generation (EFISHG) measurements, we probed the transient electric field in a double-layer indium zinc oxide (IZO)/N, , (Alq3)/Al electroluminescent (EL) diode. Results evidently showed that EL was initiated by the injected hole transport across layer, and holes accumulated at the interface while EL was enhanced. Analysis based on the Maxwell–Wagner effect model well accounted for the hole accumulation. EFISHG measurement is useful as a tool for probing carrier behavior in organic ELdevices.
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