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Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation
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10.1063/1.3278596
/content/aip/journal/apl/95/26/10.1063/1.3278596
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3278596
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Figures

Image of FIG. 1.
FIG. 1.

Schematic structure (a) and Raman spectra of Si cantilever with and without SiN:H (b). Raman measurements were performed in the region shown by the broken circle in (a).

Image of FIG. 2.
FIG. 2.

Fourier transform IR spectra of sample before and after annealing at without UV irradiation (a) and annealing temperature dependence of N–H bond concentration (b).

Image of FIG. 3.
FIG. 3.

Tensile strain in SiN:H deposited Si as a function of photon dose rate of UV irradiation (wavelength: 172, 308, and 436 nm, temperature: , and period: 60 min).

Image of FIG. 4.
FIG. 4.

Change in tensile strain (a) and annihilated N–H bond concentration (b) by UV irradiation (photon dose rate: , temperature: , and period: 60 min) as a function of wavelength. Data of samples before irradiation are shown by the broken lines in (a) and (b), and those after annealing (, 60 min) without irradiation are shown by the dotted line in (a).

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/content/aip/journal/apl/95/26/10.1063/1.3278596
2009-12-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3278596
10.1063/1.3278596
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