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Schematic structure (a) and Raman spectra of Si cantilever with and without SiN:H (b). Raman measurements were performed in the region shown by the broken circle in (a).
Fourier transform IR spectra of sample before and after annealing at without UV irradiation (a) and annealing temperature dependence of N–H bond concentration (b).
Tensile strain in SiN:H deposited Si as a function of photon dose rate of UV irradiation (wavelength: 172, 308, and 436 nm, temperature: , and period: 60 min).
Change in tensile strain (a) and annihilated N–H bond concentration (b) by UV irradiation (photon dose rate: , temperature: , and period: 60 min) as a function of wavelength. Data of samples before irradiation are shown by the broken lines in (a) and (b), and those after annealing (, 60 min) without irradiation are shown by the dotted line in (a).
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