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High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide
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We demonstrate a compact, high speed Gephotodetector efficiently butt-coupled with a large cross-section silicon-on-insulate (SOI) waveguide in which the Ge p-i-n junction is placed in the horizontal direction to enable very high speed operation. The demonstrated photodetector has an active area of only , greater than 32 GHz optical bandwidth, and a responsivity of 1.1 A/W at a wavelength of 1550 nm. Very importantly the device can readily be integrated with high performance wavelength-division-multiplexing filters based on large cross-section SOI waveguide to form monolithic integrated siliconphotonics receivers for multichannel terabit data transmission applications.
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