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High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide
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FIG. 1.

(a) Schematic view of Ge photodetector integrated with SOI waveguide. (b) Cross-section view of the Ge p-i-n region.

Image of FIG. 2.

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FIG. 2.

SEM cross-section image of the fabricated photodetector.

Image of FIG. 3.

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FIG. 3.

Measured responsivity of TE and TM polarization light over 1260 to 1640 nm.

Image of FIG. 4.

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FIG. 4.

Measured frequency response for a device with active area.

Image of FIG. 5.

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FIG. 5.

Measured optical bandwidth for devices with different i-Ge widths.

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/content/aip/journal/apl/95/26/10.1063/1.3279129
2009-12-29
2014-04-19

Abstract

We demonstrate a compact, high speed Gephotodetector efficiently butt-coupled with a large cross-section silicon-on-insulate (SOI) waveguide in which the Ge p-i-n junction is placed in the horizontal direction to enable very high speed operation. The demonstrated photodetector has an active area of only , greater than 32 GHz optical bandwidth, and a responsivity of 1.1 A/W at a wavelength of 1550 nm. Very importantly the device can readily be integrated with high performance wavelength-division-multiplexing filters based on large cross-section SOI waveguide to form monolithic integrated siliconphotonics receivers for multichannel terabit data transmission applications.

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Scitation: High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3279129
10.1063/1.3279129
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