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Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications
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10.1063/1.3279131
/content/aip/journal/apl/95/26/10.1063/1.3279131
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3279131
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Shows cross-sectional TEM of the Ti-based germanosilicide samples after annealed at (a) and (b) .

Image of FIG. 2.
FIG. 2.

(a) Shows a comparison on overall region XPS spectra between the Ti-based germanosilicide samples annealed at 500 and . Figures 2(b)–2(d) show XPS of Si, Ge, and Ti on the samples after annealed at , respectively.

Image of FIG. 3.
FIG. 3.

And its inset show a comparison of high frequency capacitance-voltage characteristics on the Ti-based germanosilicide samples annealed at 500 and , respectively.

Image of FIG. 4.
FIG. 4.

Shows retention and endurance characteristics of the titania-germanosilicide NCs memory capacitor annealed at .

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/content/aip/journal/apl/95/26/10.1063/1.3279131
2009-12-31
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3279131
10.1063/1.3279131
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