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Contact and channel resistances of organic field-effect transistors based on benzodithiophene-dimer films deposited on pentacene crystallinity control layers
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/content/aip/journal/apl/95/26/10.1063/1.3280050
2009-12-29
2014-10-22

Abstract

We have investigated contact and channel resistances of organic field-effect transistors (FETs) based on benzodithiophene (BDT)-dimer filmsdeposited on thin pentacene layers used as crystallinity control layers (CCLs). The contact resistance of source/drain electrodes made of conductive organic films instead of Aufilms has been reduced for pentacene-CCL/BDT-dimer FETs; the carrier mobility has been improved to at maximum. Because the channel resistance of the pentacene-CCL/BDT-dimer FETs is found to be lower than that of reference pentacene FETs, the carrier transport in the BDT-dimer layers is more important than that in the pentacene CCLs for the high mobility.

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Scitation: Contact and channel resistances of organic field-effect transistors based on benzodithiophene-dimer films deposited on pentacene crystallinity control layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3280050
10.1063/1.3280050
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