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Contact and channel resistances of organic field-effect transistors based on benzodithiophene-dimer films deposited on pentacene crystallinity control layers
3.W. Y. Chou, C. W. Kuo, H. L. Cheng, Y. R. Chen, F. C. Tung, F. Y. Yang, D. Y. Shu, and C. C. Liao, Appl. Phys. Lett. 89, 112126 (2006).
7.K. Yamaguchi, K. Nakashima, S. Takamiya, M. Minami, Y. Doge, Y. Nishide, H. Osuga, K. Uno, C. Nakamoto, and I. Tanaka, Jpn. J. Appl. Phys., Part 2 46, L727 (2007).
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We have investigated contact and channel resistances of organic field-effect transistors (FETs) based on benzodithiophene (BDT)-dimer filmsdeposited on thin pentacene layers used as crystallinity control layers (CCLs). The contact resistance of source/drain electrodes made of conductive organic films instead of Aufilms has been reduced for pentacene-CCL/BDT-dimer FETs; the carrier mobility has been improved to at maximum. Because the channel resistance of the pentacene-CCL/BDT-dimer FETs is found to be lower than that of reference pentacene FETs, the carrier transport in the BDT-dimer layers is more important than that in the pentacene CCLs for the high mobility.
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