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Influence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on Ge
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10.1063/1.3280075
/content/aip/journal/apl/95/26/10.1063/1.3280075
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3280075
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Si cap MLs ( for a strained Si layer on Ge) grown on Ge as a function of deposition time (in s) for different Si cap processes. Incubation time is highlighted for the four first Si MLs deposited. Growth switches from a Ge-like to a Si-like surface at four MLs explaining a change in growth rates.

Image of FIG. 2.
FIG. 2.

(a) Comparison of EXLE SIMS Ge profiles in 4, 6, 8, and 10 Si MLs deposited on Ge with the and -ATM processes (b) Comparison of EXLE SIMS Ge profiles in Si caps grown with at atmospheric pressure with , , , and .

Image of FIG. 3.
FIG. 3.

Comparison of experimental and simulated Ge profiles in Si cap for both silane (a) and trisilane (b) processes for 4, 6, 8, and 10 Si MLs grown on Ge.

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/content/aip/journal/apl/95/26/10.1063/1.3280075
2009-12-31
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of Si precursor on Ge segregation during ultrathin Si reduced pressure chemical vapor deposition on Ge
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3280075
10.1063/1.3280075
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