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Changes in band structure induced by charge localization and surface segregation
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Grazing-incident XRD pattern using radiation. (011) lattice-plane spacing, (S1), 0.3190 (S2), and 0.3189 nm (S3), are 0.19%, 0.25%, and 0.28% smaller than that of bulk material (0.3198 nm). (b) Field-emission SEM surface morphology; scale bars: 500 nm. Phase segregation of nanowires is obvious on S3 surface.

Image of FIG. 2.
FIG. 2.

High resolution XPS spectra: (a) and core levels; (b) and VBs. Pass energy of analyzer: 25 eV; charge reference: line at 284.6 eV. Fitted peak at lower BE corresponds to O in lattice, and that at higher BE attributes to either absorbed O species or the lattice O with trapped holes. The VB maximum of are determined to be at (S1), −316.4 (S2), and 25.8 meV (S3).

Image of FIG. 3.
FIG. 3.

(a) Electronic structure of in the and phases. Temperature dependence of (b) IR absorptions and (c) absorption coefficient around absorption edges at . Reduced band gaps are 0.46, 0.40, and 0.43 eV for S1–S3, respectively.

Image of FIG. 4.
FIG. 4.

Temperature dependence of PL spectra acquired with attenuated He–Cd laser power. Fitted peaks locate at wavelength, , 492.9, and 563.1 nm (S1); 426.1, 489.9, and 560.8 nm (S2); and 425.3, 490.4, and 561.4 nm (S3). Corresponding peak energy: (, 2, or 3).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Changes in VO2 band structure induced by charge localization and surface segregation