1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
f
Capacitance-voltage and current-voltage characteristics of graphite oxide thin films patterned by ultraviolet photolithography
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/95/26/10.1063/1.3280381
1.
1.D. Li, M. B. Muller, S. Gilje, R. B. Kaner, and G. G. Wallace, Nat. Nanotechnol. 3, 101 (2008).
http://dx.doi.org/10.1038/nnano.2007.451
2.
2.C. -G. Lee, S. Park, R. S. Ruoff, and A. Dodabalapur, Appl. Phys. Lett. 95, 023304 (2009).
http://dx.doi.org/10.1063/1.3176216
3.
3.G. Eda, Y. -Y. Lin, S. Miller, C. -W. Chen, W. -F. Su, and M. Chhowalla, Appl. Phys. Lett. 92, 233305 (2008).
http://dx.doi.org/10.1063/1.2937846
4.
4.X. Wu, M. Sprinkle, X. Li, F. Ming, C. Berger, and W. A. De Heer, Phys. Rev. Lett. 101, 026801 (2008).
http://dx.doi.org/10.1103/PhysRevLett.101.026801
5.
5.G. Liu, J. Velasco, Jr., W. Bao, and C. N. Lau, Appl. Phys. Lett. 92, 203103 (2008).
http://dx.doi.org/10.1063/1.2928234
6.
6.R. V. Gorbachev, A. S. Mayorov, A. K. Savchenko, D. W. Horsell, and F. Guinea, Nano Lett. 8, 1995 (2008).
http://dx.doi.org/10.1021/nl801059v
7.
7.M. C. Lemme, T. J. Echtermeyer, M. Baus, and H. Kurz, IEEE Electron Device Lett. 28, 282 (2007).
http://dx.doi.org/10.1109/LED.2007.891668
8.
8.S. Pang, H. N. Tsao, X. Feng, and K. Mullen, Adv. Mater. 21, 3488 (2009).
http://dx.doi.org/10.1002/adma.200803812
9.
9.M. Hirata, T. Gotou, S. Horiuchi, M. Fujiwara, and M. Ohba, Carbon 42, 2929 (2004).
10.
10.H. -K. Jeong, H. -J. Noh, J. -Y. Kim, M. H. Jin, C. Y. Park, and Y. H. Lee, EPL 82, 67004 (2008).
http://dx.doi.org/10.1209/0295-5075/82/67004
11.
11.A. Anwar, B. Nabet, J. Culp, and F. Castro, J. Appl. Phys. 85, 2663 (1999).
http://dx.doi.org/10.1063/1.369627
12.
12.N. D. Young and A. Gill, Semicond. Sci. Technol. 5, 728 (1990).
http://dx.doi.org/10.1088/0268-1242/5/7/016
13.
13.M. Stuart, Br. J. Appl. Phys. 18, 1637 (1967).
http://dx.doi.org/10.1088/0508-3443/18/11/418
14.
14.C. R. Gomez-Navarro, T. Weitz, A. M. Bittner, M. Scolari, A. Mews, M. Burghard, and K. Kern, Nano Lett. 7, 3499 (2007).
http://dx.doi.org/10.1021/nl072090c
15.
15.V. López, R. S. Sundaram, C. Gómez-Navarro, D. Olea, M. Burghard, J. Gómez-Herrero, F. Zamora, and K. Kern, Adv. Mater. 21, 4683 (2009).
16.
journal-id:
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3280381
Loading
View: Figures

Figures

Image of FIG. 1.

Click to view

FIG. 1.

(a) Schematic diagram of the experimental setup used for undertaking two terminal I-V and C-V measurements. (b) Optical microscopic image of the GO film patterned by UV photolithography with thermally evaporated silver contacts. (c) Atomic force microscopic image of the lithographically patterned GO film and (d) its thickness profile.

Image of FIG. 2.

Click to view

FIG. 2.

I-V characteristics of the GO thin film at different temperatures. Inset: Current-voltage characteristics of the thin film and ultrathin film GO.

Image of FIG. 3.

Click to view

FIG. 3.

Plot of I vs for different temperatures. Inset: Magnified view of the plot at high electric fields.

Image of FIG. 4.

Click to view

FIG. 4.

Capacitance-voltage measurement for the GO thin film at room temperature.

Loading

Article metrics loading...

/content/aip/journal/apl/95/26/10.1063/1.3280381
2009-12-30
2014-04-23

Abstract

Electrical characteristics of graphite oxide (GO) thin films deposited on a p-type silicon substrate were investigated to explore its potential application as a dielectric material in organic field effect transistors. Channel current in the GO films exhibited linear response with the applied bias in the positive voltage regime and increased exponentially for negative source-drain bias. This rectifying behavior arises due to the Coulombic interaction between the electrons emitted from the metal contact and the space charge region in the GO film. A clockwise hysteresis loop was observed in the capacitance-voltage characteristics due to the presence of traps at the interface.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/95/26/1.3280381.html;jsessionid=1i3hbirkbdqcm.x-aip-live-06?itemId=/content/aip/journal/apl/95/26/10.1063/1.3280381&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Capacitance-voltage and current-voltage characteristics of graphite oxide thin films patterned by ultraviolet photolithography
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3280381
10.1063/1.3280381
SEARCH_EXPAND_ITEM