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Comparison of LPVs in Ti(6.2 nm)/Si and (b) structures as a function of laser position on both metal side and semiconductor side , where the distance of contacts are (a) 3.6 mm and (b) 9.6 mm, respectively. The insets display the schematic setup for LPV measurement.
(a) Peak values of LPV on metal side and semiconductor side as a function of thickness in structures, where the distance of contacts is 9.6 mm. (b) The transverse I-V curves of structures with different thickness. The inset shows the schematic circuit of the sample measurement. (c) Resistance of structures response to thickness at bias voltage of 25 V. (d) Theoretical results of normalized excess electron density at lateral direction in structures with different thickness, where the laser position is at 1 mm, and the position of two contacts are −2 and 2 mm, respectively.
Schematic LPE mechanism in (a) MS structure, (b) OMS structure with thin oxide thickness, and (c) OMS structure with thick oxide thickness, respectively. Insets show the schematic simple equilibrium energy-band diagram of the structures.
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