Full text loading...
(a) Schematic diagram of the ZnO ReRAM device structure and (b) the XRD pattern of the ZnO film grown on SS.
Typical (a) unipolar and (b) bipolar resistive switching characteristics of the Au/ZnO/SS device at room temperature. (c) The resistance cycle characteristics measured at 0.1 V for 100 times.
(a) Typical unipolar resistive switching characteristics of flat and bent Au/ZnO/SS device and (b) image of the bent device and the templates used for the bending.
The log-log scale curves of the typical unipolar resistive switching characteristics in the LRS and the HRS. The inset shows the curve at high voltage region in the HRS.
Article metrics loading...