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Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
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10.1063/1.3280864
/content/aip/journal/apl/95/26/10.1063/1.3280864
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3280864
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the ZnO ReRAM device structure and (b) the XRD pattern of the ZnO film grown on SS.

Image of FIG. 2.
FIG. 2.

Typical (a) unipolar and (b) bipolar resistive switching characteristics of the Au/ZnO/SS device at room temperature. (c) The resistance cycle characteristics measured at 0.1 V for 100 times.

Image of FIG. 3.
FIG. 3.

(a) Typical unipolar resistive switching characteristics of flat and bent Au/ZnO/SS device and (b) image of the bent device and the templates used for the bending.

Image of FIG. 4.
FIG. 4.

The log-log scale curves of the typical unipolar resistive switching characteristics in the LRS and the HRS. The inset shows the curve at high voltage region in the HRS.

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/content/aip/journal/apl/95/26/10.1063/1.3280864
2009-12-31
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/26/10.1063/1.3280864
10.1063/1.3280864
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