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(a) Z-contrast image and (b) the corresponding intensity profile from sample B, indicating a transition region of the reduced intensity on the SiC side of the interface.
Peak effective channel mobility vs width of the transition layer as measured using the Z-contrast image intensity profiles.
Z-contrast image from sample B and the corresponding and atomic ratios calculated from the EELS spectra corresponding to the interface region, indicating a transition region with a higher concentration of carbon than silicon.
Description of the devices analyzed in this study.
Summary of peak mobility and transition region width for each of the samples.
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