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Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy
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10.1063/1.3154518
/content/aip/journal/apl/95/3/10.1063/1.3154518
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3154518

Figures

Image of FIG. 1.
FIG. 1.

Normalized CL spectra of the four AlN samples grown under significantly different growth conditions. All samples have good material quality as evidenced by the presence of an intense near band edge emission. The spectra are not corrected for the spectral response of the CL system leading to an overemphasis of the defect luminescence with respect to the underestimated excitonic intensity.

Image of FIG. 2.
FIG. 2.

Absolute CL spectra from sample A1 recorded at various temperatures.

Image of FIG. 3.
FIG. 3.

Evolution of the absolute CL intensity with temperature for the -center and the Al vacancy of sample A1 (a), as well as for the center, the center, and the near band edge luminescence of sample B1 (b). (Experimental ; Arrhenius lines.)

Tables

Generic image for table
Table I.

Logic table correlating the defect luminescence with the individual growth conditions, indicates a high intensity of the defect luminescence, indicates a moderate intensity, – indicates a minor intensity of the defect luminescence, and – – indicates the absence of the defect luminescence in the sample, respectively.

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/content/aip/journal/apl/95/3/10.1063/1.3154518
2009-07-21
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3154518
10.1063/1.3154518
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