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Oxidant prepulsing of Ge (100) prior to atomic layer deposition of : In situ surface characterization
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10.1063/1.3177195
/content/aip/journal/apl/95/3/10.1063/1.3177195
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3177195
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of Pt-gated MOS capacitors (a) CTRL sample and (b) oxidant prepulsed sample. The insets in [(a) and (b)] show the plots for these capacitors.

Image of FIG. 2.
FIG. 2.

characteristics of Pt-gated MOS capacitors at 18 different frequencies in the range 1 kHz to 1 MHz (a) CTRL sample, (b) oxidant prepulsed sample, and (c) distribution of CTRL and oxidant prepulsed samples in the -type Ge bandgap.

Image of FIG. 3.
FIG. 3.

In situ XPS spectra during oxidant prepulsing (a) initial spectrum of sample in ALD chamber prior to prepulsing, (b) 2 cycles showing hydroxyl-terminated interface formation, (c) 4 cycles showing evolution of component over the detection limit, (d) 48 cycles showing maximum interfacial hydroxylation , and (e) 100 cycles showing Ge oxidation states just prior to ALD. Spectra were recorded for each cycle up to 100 cycles.

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/content/aip/journal/apl/95/3/10.1063/1.3177195
2009-07-24
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3: In situ surface characterization
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3177195
10.1063/1.3177195
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