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Uniaxial strain relaxation in ion implanted (110) oriented SiGe layers
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10.1063/1.3180279
/content/aip/journal/apl/95/3/10.1063/1.3180279
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3180279
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Angular channeling scans of as-grown and relaxed 50 nm thick (011) layers in (a) the [010] and (b) the [111] direction. The corresponding angles in a cubic Si crystal are shown for reference.

Image of FIG. 2.
FIG. 2.

The relaxation degree of 50 nm thick (011) layers function of the implantation dose for (a) and (b) implantation depths (in the Si substrate). The biaxial relaxation degree of 50 nm thick (100) layers is shown for comparison.

Image of FIG. 3.
FIG. 3.

PV-TEM of a 50 nm layer after He implantation and annealing. Only parallel MDs along the crystal direction is observed at the SiGe/Si interface indicating uniaxial strain relaxation in the [100] direction.

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/content/aip/journal/apl/95/3/10.1063/1.3180279
2009-07-21
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3180279
10.1063/1.3180279
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