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Hole diffusion profile in a silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry
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10.1063/1.3184567
/content/aip/journal/apl/95/3/10.1063/1.3184567
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3184567
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental (dotted lines) and best-model calculation (solid lines) -spectra (a) and -spectra (b) of the low-doped -type epitaxial layer deposited on a -type Si substrate at , 65°, and 75°. A strong surface guided wave (SGW) resonance can be observed at .

Image of FIG. 2.
FIG. 2.

Hole distribution as a function of the distance from the sample surface. The hole profile is approximated by 35 layers with discrete hole concentrations to model the ellipsometric data presented in Fig. 1.

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/content/aip/journal/apl/95/3/10.1063/1.3184567
2009-07-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3184567
10.1063/1.3184567
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