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Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures
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10.1063/1.3184569
/content/aip/journal/apl/95/3/10.1063/1.3184569
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3184569

Figures

Image of FIG. 1.
FIG. 1.

Schematic presentation of atom arrangements in growth plane for the case of a (0001) GaN layer, grown on sapphire (0001) at mismatch of lattice parameters equal to −0.33 (a) and 0.14 (b).

Image of FIG. 2.
FIG. 2.

-scans around the direction normal to the surface of the diffraction plane GaN layer and sapphire substrate with a thickness of (a) and (b).

Image of FIG. 3.
FIG. 3.

(a) Dependence of curvature radius on substrate thickness: (1) ideal structure; (2) structure with uniform dislocation distribution on layer thickness; (3) structure accounting for twist between cells of GaN layer and sapphire substrate, circles—experimental results. (b) Deformation state variation as a function of twist angle between cells of GaN layer and sapphire substrate.

Tables

Generic image for table
Table I.

Structural parameters obtained from the XRD data.

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/content/aip/journal/apl/95/3/10.1063/1.3184569
2009-07-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3184569
10.1063/1.3184569
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