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Schematic presentation of atom arrangements in growth plane for the case of a (0001) GaN layer, grown on sapphire (0001) at mismatch of lattice parameters equal to −0.33 (a) and 0.14 (b).
-scans around the direction normal to the surface of the diffraction plane GaN layer and sapphire substrate with a thickness of (a) and (b).
(a) Dependence of curvature radius on substrate thickness: (1) ideal structure; (2) structure with uniform dislocation distribution on layer thickness; (3) structure accounting for twist between cells of GaN layer and sapphire substrate, circles—experimental results. (b) Deformation state variation as a function of twist angle between cells of GaN layer and sapphire substrate.
Structural parameters obtained from the XRD data.
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