Full text loading...
Cross-sectional HRTEM (a) and inset of (b) and HAADF (b) images of the film on Si substrate. The XRD patterns (c) for the samples as-deposited, annealed in air and at for 30 min. The core-loss EELS spectra (d) of O -edge recorded along the line.
N XPS spectra (a) and electron energy-loss spectra (b) of the film as-deposited with ionized nitrogen.
High frequency characteristics of the MOS structure.
The curve of the MOS structure (a). Conduction mechanism fitting of the MOS structure under gate injection (b) and substrate injection (c).
Article metrics loading...