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Improved thermal stability, interface, and electrical properties of films prepared by pulsed laser deposition using in situ ionized nitrogen
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10.1063/1.3184577
/content/aip/journal/apl/95/3/10.1063/1.3184577
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3184577
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional HRTEM (a) and inset of (b) and HAADF (b) images of the film on Si substrate. The XRD patterns (c) for the samples as-deposited, annealed in air and at for 30 min. The core-loss EELS spectra (d) of O -edge recorded along the line.

Image of FIG. 2.
FIG. 2.

N XPS spectra (a) and electron energy-loss spectra (b) of the film as-deposited with ionized nitrogen.

Image of FIG. 3.
FIG. 3.

High frequency characteristics of the MOS structure.

Image of FIG. 4.
FIG. 4.

The curve of the MOS structure (a). Conduction mechanism fitting of the MOS structure under gate injection (b) and substrate injection (c).

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/content/aip/journal/apl/95/3/10.1063/1.3184577
2009-07-21
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved thermal stability, interface, and electrical properties of HfO2 films prepared by pulsed laser deposition using in situ ionized nitrogen
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3184577
10.1063/1.3184577
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