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material for phase change memory
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10.1063/1.3184787
/content/aip/journal/apl/95/3/10.1063/1.3184787
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3184787
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Ionicity-hybridization map of potential phase change materials. (b) Sheet resistance of films as a function of temperature with a heating/cooling rate of 10 K/min.

Image of FIG. 2.
FIG. 2.

(a) Sheet resistance of film as a function of temperature with different heating rate, and the inset shows the Kissinger plot for calculation. (b) Plot of “time to failure” vs reciprocal temperature (isothermal process), showing data retention time.

Image of FIG. 3.
FIG. 3.

(a) Carrier density and Hall mobility of film as a function of temperature. (b) XRD results of amorphous and crystalline films, and the inset shows the TEM photo of crystalline film and the selected area electron diffraction pattern.

Image of FIG. 4.
FIG. 4.

(a) XPS spectra of Sn of crystalline film. (b) curves of PCM cell using film with different reset pulse widths, and the inset shows the curves obtained on the same PCM cell.

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/content/aip/journal/apl/95/3/10.1063/1.3184787
2009-07-21
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sn12Sb88 material for phase change memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3184787
10.1063/1.3184787
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