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(a) Relative atomic (at. %) concentrations of Si (squares), N (circles), and Er (triangles in the inset), and refractive indices of the films measured by ellipsometer at 1550 nm (open stars) as a function of flow rate percent. (b) HRTEM micrograph of a sample with a relative Si concentration of 48 at. % annealed at for 200 s under forming gas environment. The SAED pattern of the sample is shown in the inset.
(a) Normalized PLE spectra collected at 1.54 microns from samples with various excess Si at. %. (b) The effective excitation cross sections (squares) and the absorption coefficients at 458 nm (circles) of the samples with different excess Si at. %. The straight line is to guide the eye. In the inset: The optical gap calculated from the Tauc plot of the stoichiometric sample which is highlighted with an arrow in (a).
(a) Er integrated PL intensity of samples with Si at. % between 43 and 50 (refractive indices between 2.05 and 2.37) annealed at temperatures between 600 and , with (b) corresponding Er PL lifetimes vs refractive indices of the films. (c) Er PL spectra corresponding to samples with refractive indices , 2.10, 2.12, 2.16, 2.12, 2.25, and 2.37, and annealed at the optimum temperatures shown in panel (a). (d) PL decay traces of the samples in panel (c).
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