Full text loading...
Epitaxial structure of the etched-mesa photodetector with calculated band diagram.
Current-voltage characteristics for and devices at 295 K. Bottom curves are dark characteristics, while the upper curve is with LED illumination.
Photodetector dark current density at 295 K as a function of effective mesa size. Points are measured values, while the line is a fit to the lowest current density points to extract area- and perimeter-dependent leakage values.
Dark current as a function of temperature for a device with a bias of −0.1 V. Activation energies at high and low temperatures are indicated by the dashed lines.
Article metrics loading...