banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Aharonov–Bohm oscillations in a nanoscale dopant ring in silicon
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

(a) STM image of a planar Si:P dopant ring after STM lithography. In the bright areas, the hydrogen has been desorbed by the STM lithography. The device was patterned almost entirely on a single atomic terrace. (b) Schematic of the completed device and the electrical measurement setup. Dark gray: Si(001) substrate with etched registration marker; blue: STM-patterned planar P-doped device; light gray: Si encapsulation; yellow: surface contacts.

Image of FIG. 2.
FIG. 2.

[(a) and (b)] Temperature dependence of the magnetoresistance of the Si:P dopant ring in two different cooldowns. The measurement temperatures are indicated. The periodic component due to AB oscillations in both data sets has been highlighted by vertical stripes.

Image of FIG. 3.
FIG. 3.

FFT amplitude of the magnetoresistance for the two cooldowns. The frequency ranges of the AB oscillations and their harmonics ( and ) and the aperiodic fluctuations are indicated. The curve for the second cooldown is vertically shifted by for clarity. Significant peaks and their harmonics are indicated by the diamonds and stars.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Aharonov–Bohm oscillations in a nanoscale dopant ring in silicon