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(a) STM image of a planar Si:P dopant ring after STM lithography. In the bright areas, the hydrogen has been desorbed by the STM lithography. The device was patterned almost entirely on a single atomic terrace. (b) Schematic of the completed device and the electrical measurement setup. Dark gray: Si(001) substrate with etched registration marker; blue: STM-patterned planar P-doped device; light gray: Si encapsulation; yellow: surface contacts.
[(a) and (b)] Temperature dependence of the magnetoresistance of the Si:P dopant ring in two different cooldowns. The measurement temperatures are indicated. The periodic component due to AB oscillations in both data sets has been highlighted by vertical stripes.
FFT amplitude of the magnetoresistance for the two cooldowns. The frequency ranges of the AB oscillations and their harmonics ( and ) and the aperiodic fluctuations are indicated. The curve for the second cooldown is vertically shifted by for clarity. Significant peaks and their harmonics are indicated by the diamonds and stars.
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