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PL spectra of the AlN layer grown on sapphire for excitation densities varied between 0.14 and at low temperature (10 K). Increase of the excitation density results in an overall intensity increase and a superlinear increase of the band. The spectrum with the lowest excitation density is additionally shown in the region of the -exciton amplified by a factor of 50.
Double logarithmic plot of the intensities of the band related to the donor bound exciton. The least square fit (solid line) reveals a superlinear dependency.
Normalized and vertically shifted PL spectra of the AlN layer grown on for varying excitation densities at low temperature (10 K).
Plot of the intensity of the band and that of the biexciton in relation to the intensity of the donor bound exciton. The superlinear behavior of the band is clearly observable. Numerical fits of the intensities are hindered in the midpower range by its location at the slope of the band.
Energy positions of the observed PL peaks of the AlN layer sample grown on sapphire.
Energy positions of the observed contributions of the second AlN layer sample, grown on .
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