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Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range
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10.1063/1.3187534
/content/aip/journal/apl/95/3/10.1063/1.3187534
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3187534
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Low temperature PL emission spectra of InAsN and InAs reference samples grown on GaAs (001).

Image of FIG. 2.
FIG. 2.

Temperature dependence of the PL spectrum for sample A0299 (1% N). The inset shows the semilog plot of the PL spectra. For clarity, the PL spectra in the inset are displaced along the vertical axis.

Image of FIG. 3.
FIG. 3.

PL spectrum at for A0299 containing 1% N. The line is an exponential fit to the high energy tail of the PL spectrum. The inset shows the PL spectra at different after subtraction of an exponential fit to the high energy side of the PL emission.

Image of FIG. 4.
FIG. 4.

-dependence of the PL peak energy for A0299 containing 1% N. The continuous line is the calculated -dependence of the band gap energy according to the empirical Varshni equation.

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/content/aip/journal/apl/95/3/10.1063/1.3187534
2009-07-22
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characterization of InAsN/GaAs dilute nitride semiconductor alloys for the midinfrared spectral range
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/3/10.1063/1.3187534
10.1063/1.3187534
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