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Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions
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10.1063/1.3186062
/content/aip/journal/apl/95/4/10.1063/1.3186062
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3186062
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The temperature dependence of (a) Er PL intensity normalized to the value at 10 K, (b) Er PL lifetime at , (c) the temperature quenching ratio of Er PL intensity (square) and lifetime (circle) at between 4 K and RT, and (d) the rate constant (circle) and activation energy (triangle) as a function of refractive index. The inset of (a) is temperature dependence of integrated PL for the three samples. The inset of (d) shows a schematic energy diagram for temperature quenching of Er lifetime.

Image of FIG. 2.
FIG. 2.

(a) Temperature dependence of (square) in the sample with refractive 2.25 and integrated PL intensity (circle). (b) Coupling coefficient (square) and transfer rate (circle) between and Er.

Image of FIG. 3.
FIG. 3.

(a) Visible PL spectrum at RT for samples doped and undoped with Er together with Er PL spectra at RT and 4 K. (b) PL lifetime at 600 nm from matrix.

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/content/aip/journal/apl/95/4/10.1063/1.3186062
2009-07-29
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3186062
10.1063/1.3186062
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