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Electron spin quantum beats and room temperature factor in GaAsN
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10.1063/1.3186076
/content/aip/journal/apl/95/4/10.1063/1.3186076
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3186076
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TRKR measurements in the GaAsN sample with 0.9% nitrogen fraction (sample C). . Inset: schematic of the experimental setup.

Image of FIG. 2.
FIG. 2.

TRKR measurements for a fixed magnetic field in the three GaAsN samples (nitrogen fraction: A: 0.09%; B: 0.65%; C: 0.9%). The dashed lines are the result of the fits. .

Image of FIG. 3.
FIG. 3.

Nitrogen fraction dependence of the measured electron factor obtained from the spin quantum beats measurements; red circular symbol: GaAs bulk data from Ref. 18. The dashed line is a guide for the eyes. Inset: measured Larmor precession frequency as a function of the applied magnetic field for each sample. The solid line is a simple linear fit to the frequency, yielding the electron Landé factor.

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/content/aip/journal/apl/95/4/10.1063/1.3186076
2009-07-31
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron spin quantum beats and room temperature g factor in GaAsN
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3186076
10.1063/1.3186076
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