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Phase-transition driven memristive system
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10.1063/1.3187531
/content/aip/journal/apl/95/4/10.1063/1.3187531
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3187531
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the device. The area of the film is . (b) Three current-voltage curves for our device exhibiting nonlinear hysteretic behavior which is indicative of a memristive system.

Image of FIG. 2.
FIG. 2.

(a) Resistivity-temperature curves of our device illustrating the hysteretic nature of the IMT phase transition. The vertical dotted line shows the bias temperature for experiments of Figs. 1(b) and 2(b). (b) Demonstration of information storage in a memristive vanadium dioxide film. Each 50 V pulse triggers the transition to a new resistivity level.

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/content/aip/journal/apl/95/4/10.1063/1.3187531
2009-07-27
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phase-transition driven memristive system
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3187531
10.1063/1.3187531
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