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Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in -type GaN films
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10.1063/1.3187540
/content/aip/journal/apl/95/4/10.1063/1.3187540
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3187540

Figures

Image of FIG. 1.
FIG. 1.

Room temperature PL spectra of GaN samples 1 and 2 of series I, where the intensity is normalized according to the near-band-edge luminescence at 3.42 eV. The intensity ratio of BL to YL is 0.070 and 0.126 for samples 1 and 2, respectively.

Image of FIG. 2.
FIG. 2.

The dependence of value on the DCXRD FWHM at (102) plane for all the ten GaN samples in series I. The inset shows the and value dependences on the DCXRD FWHM at (102) plane.

Image of FIG. 3.
FIG. 3.

Room temperature PL spectra of GaN samples 11, 12, 13, and 14 in series II, which have the same DCXRD FWHM at (102) plane as narrow as 180 arc sec. The intensity is normalized according to the near-band-edge luminescence at 3.42 eV. The fluxes used in the growth were 0, 0.05, 0.22, and 0.45 nmol/min for samples 11, 12, 13, and 14, respectively. The inset shows the relationship between and flux for the series II GaN samples.

Image of FIG. 4.
FIG. 4.

A proposed transition model about the BL and YL in -type GaN materials.

Tables

Generic image for table
Table I.

Characterization results and Si doping condition of -type GaN samples in series I.

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/content/aip/journal/apl/95/4/10.1063/1.3187540
2009-07-27
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3187540
10.1063/1.3187540
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