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(a) SEM image of the etched GaN surface. (b) SEM cross-sectional image of the regrown sample. (c) A zoom out view of the inverted pyramid structures.
XRD rocking curves for IP-LED and R-LED samples.
(a) Schematic of IP-LED structure. (b) EL spectra of IP-LED and R-LED in normal direction. (c) curves of IP-LED and R-LED. (d) Far field patterns of IP-LED and R-LED.
Monte Carlo ray tracing simulations. (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED. (c) Light extraction enhancements vs different pyramid heights.
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