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High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
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10.1063/1.3190504
/content/aip/journal/apl/95/4/10.1063/1.3190504
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3190504
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of the etched GaN surface. (b) SEM cross-sectional image of the regrown sample. (c) A zoom out view of the inverted pyramid structures.

Image of FIG. 2.
FIG. 2.

XRD rocking curves for IP-LED and R-LED samples.

Image of FIG. 3.
FIG. 3.

(a) Schematic of IP-LED structure. (b) EL spectra of IP-LED and R-LED in normal direction. (c) curves of IP-LED and R-LED. (d) Far field patterns of IP-LED and R-LED.

Image of FIG. 4.
FIG. 4.

Monte Carlo ray tracing simulations. (a) and (b) are zoom in views at GaN-sapphire interface for IP-LED and R-LED. (c) Light extraction enhancements vs different pyramid heights.

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/content/aip/journal/apl/95/4/10.1063/1.3190504
2009-07-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3190504
10.1063/1.3190504
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