Full text loading...
XRD scan of the (002) peak of Er doped grown on GaN/sapphire template. The insert shows the XRD rocking curves of the (002) peak of Er doped GaN and Er doped . The numbers located under the curves indicate the FWHM of the rocking curves.
PL spectra of Er doped GaN and Er doped measured at 300 K for an excitation wavelength of 263 nm.
Low temperature (10 K) PL spectra of GaN:Er and InGaN:Er in (a) and (b) visible spectral region.
PL peak emission intensity at as a function of integrated emission intensity of all observable impurity lines in the visible spectral region in InGaN:Er with different In contents. Solid line is the least-squares fit of data with Eq. (1).
(a) Arrhenius plot of the integrated PL emission intensity of the emission line from Er doped between 10 and 400 K based on the raw data shown in the inset. (b) The thermal activation energy of the emission line as a function of the bandgap energy of InGaN and the inset shows as a function of the In-content in InGaN.
Article metrics loading...