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Photoluminescence properties of erbium doped InGaN epilayers
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View: Figures


Image of FIG. 1.
FIG. 1.

XRD scan of the (002) peak of Er doped grown on GaN/sapphire template. The insert shows the XRD rocking curves of the (002) peak of Er doped GaN and Er doped . The numbers located under the curves indicate the FWHM of the rocking curves.

Image of FIG. 2.
FIG. 2.

PL spectra of Er doped GaN and Er doped measured at 300 K for an excitation wavelength of 263 nm.

Image of FIG. 3.
FIG. 3.

Low temperature (10 K) PL spectra of GaN:Er and InGaN:Er in (a) and (b) visible spectral region.

Image of FIG. 4.
FIG. 4.

PL peak emission intensity at as a function of integrated emission intensity of all observable impurity lines in the visible spectral region in InGaN:Er with different In contents. Solid line is the least-squares fit of data with Eq. (1).

Image of FIG. 5.
FIG. 5.

(a) Arrhenius plot of the integrated PL emission intensity of the emission line from Er doped between 10 and 400 K based on the raw data shown in the inset. (b) The thermal activation energy of the emission line as a function of the bandgap energy of InGaN and the inset shows as a function of the In-content in InGaN.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence properties of erbium doped InGaN epilayers