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The field-effect hole mobility variation and threshold voltage shift as a function of strain with bending radius , ±50, ±40, ±30, and ±10 mm, respectively, at . is the initial hole mobility of poly-Si TFT on flat substrate, while is the one after mechanical strain.
(a) The trap density variation rate under bending radius , ±50, ±40, ±30, and ±10 mm, respectively. (b) The extracted activation energy for the poly-Si TFT under different bending conditions.
XRD analysis of polycrystalline Si film on steel metal foil.
(a) The mobility variation and threshold voltage shift in -channel LTPS TFT devices under different mechanical strain as function of dc stress time under gate and drain voltage of −20 V and (b) the applied compressive strain effect along Si surface orientations (110).
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