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Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate
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10.1063/1.3193654
/content/aip/journal/apl/95/4/10.1063/1.3193654
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3193654
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The field-effect hole mobility variation and threshold voltage shift as a function of strain with bending radius , ±50, ±40, ±30, and ±10 mm, respectively, at . is the initial hole mobility of poly-Si TFT on flat substrate, while is the one after mechanical strain.

Image of FIG. 2.
FIG. 2.

(a) The trap density variation rate under bending radius , ±50, ±40, ±30, and ±10 mm, respectively. (b) The extracted activation energy for the poly-Si TFT under different bending conditions.

Image of FIG. 3.
FIG. 3.

XRD analysis of polycrystalline Si film on steel metal foil.

Image of FIG. 4.
FIG. 4.

(a) The mobility variation and threshold voltage shift in -channel LTPS TFT devices under different mechanical strain as function of dc stress time under gate and drain voltage of −20 V and (b) the applied compressive strain effect along Si surface orientations (110).

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/content/aip/journal/apl/95/4/10.1063/1.3193654
2009-07-31
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3193654
10.1063/1.3193654
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