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The epitaxial growth of indium nitride using berlinite and other piezoelectric crystals of the quartz family as substrates
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10.1063/1.3193655
/content/aip/journal/apl/95/4/10.1063/1.3193655
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3193655

Figures

Image of FIG. 1.
FIG. 1.

Photograph of the crystal used to prepare substrates in front of a dime.

Image of FIG. 2.
FIG. 2.

(a) X-ray diffraction spectrum showing the crystallinity of the substrate. (b) AFM image showing the morphology of the substrate [here (011)-oriented ].

Image of FIG. 3.
FIG. 3.

(a) x-ray diffraction spectrum showing both the signature of the (011)-oriented substrate and the (100)-plane grown InN film. (b) AFM image showing the morphology of the -plane InN epilayer. (c) PL spectra taken at liquid nitrogen for the thick -plane (blue line) and for conventional InN films (red line).

Image of FIG. 4.
FIG. 4.

Linear plot of the normalized PL intensity for (100)-plane (red line) and for conventional InN films (blue line) vs reciprocal temperature.

Tables

Generic image for table
Table I.

Temperatures of phase transitions observed on piezoelectric materials and quartz at atmospheric pressure (Ref. 11).

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/content/aip/journal/apl/95/4/10.1063/1.3193655
2009-07-31
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The epitaxial growth of indium nitride using berlinite (AlPO4) and other piezoelectric crystals of the quartz family as substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3193655
10.1063/1.3193655
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