1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Tunability of the piezoelectric fields in strained III-V semiconductors
Rent:
Rent this article for
USD
10.1063/1.3194779
/content/aip/journal/apl/95/4/10.1063/1.3194779
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3194779
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dependence of the Kleinman parameter of internal distortion on the applied strain for GaAs and InAs. For each value of the perpendicular strain , each point corresponds to a different value of the parallel strain that ranges from −0.01 to −0.1, (bottom to top) as indicated by the arrows.

Image of FIG. 2.
FIG. 2.

Dependence of the bond polarity on the applied strain for GaAs and InAs. For each value of the perpendicular strain , each point corresponds to a different value of the parallel strain that ranges from −0.01 to −0.1, (top to bottom) as indicated by the arrows.

Image of FIG. 3.
FIG. 3.

Dependence of the piezoelectric coefficients and on the applied strain for GaAs and InAs. For each value of the perpendicular strain , each point corresponds to a different value of the parallel strain that ranges from −0.01 to −0.1, (bottom to top) as indicated by the arrows.

Loading

Article metrics loading...

/content/aip/journal/apl/95/4/10.1063/1.3194779
2009-07-31
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunability of the piezoelectric fields in strained III-V semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/4/10.1063/1.3194779
10.1063/1.3194779
SEARCH_EXPAND_ITEM