1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition
Rent:
Rent this article for
USD
10.1063/1.3193663
/content/aip/journal/apl/95/5/10.1063/1.3193663
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3193663
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) PL at 77 K of 2 ML InAs QWs grown using ALE with different duration times of TMIn flow. (b) Calculated QW thickness and measured PL intensity vs TMIn flow time duration.

Image of FIG. 2.
FIG. 2.

(a) PL spectra at 77 K of 2 ML ALE-grown InAs and InAsN QWs, (b) 3 ML InAs and InAsN QWs. The inset in (b) shows the time sequence of the source gas flows for the ALE growth of 2 ML InAsN, and (c) PL spectra at 77 K of 2 ML InAsN QWs [In-N-In-N] ALE-grown with a low-temperature GaAs cap and with a high-temperature GaAs cap .

Image of FIG. 3.
FIG. 3.

(a) TOF-SIMS measurements of the In and N concentration profiles in an ALE-grown InAsN/GaAs SPSL. (b) PL spectrum at 77 K of an InAsN/GaAs SPSL structure. (c) Schematic band-gap structure and calculated fundamental e1 to hh1 transition energy in an InAsN/GaAs SPSL.

Loading

Article metrics loading...

/content/aip/journal/apl/95/5/10.1063/1.3193663
2009-08-04
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3193663
10.1063/1.3193663
SEARCH_EXPAND_ITEM