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Effect of defect saturation on terahertz emission and detection properties of low temperature GaAs photoconductive switches
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10.1063/1.3193680
/content/aip/journal/apl/95/5/10.1063/1.3193680
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3193680
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The evolution of free defect density at different optical excitation powers. (b) Calculated increase in the effective trapping time due to defect saturation.

Image of FIG. 2.
FIG. 2.

Simulated and measured FWHM of THz pulse dependence on optical power for the investigated LT-GaAs samples.

Image of FIG. 3.
FIG. 3.

Emitted and detected peak THz electric field amplitude as a function of optical power.

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/content/aip/journal/apl/95/5/10.1063/1.3193680
2009-08-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of defect saturation on terahertz emission and detection properties of low temperature GaAs photoconductive switches
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3193680
10.1063/1.3193680
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