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Measurement of the Peltier coefficient of semiconductors by lock-in thermography
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10.1063/1.3194156
/content/aip/journal/apl/95/5/10.1063/1.3194156
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3194156
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Figures

Image of FIG. 1.
FIG. 1.

Four-point contacting scheme to measure the Peltier coefficient thermographically (current and sense at contacts and , respectively). In order to avoid currents through the junction, an extra bias is applied such that every point of the cell is under reverse bias. As the test cell has grids on the and faces, the same contacting can be done for both.

Image of FIG. 2.
FIG. 2.

Image evaluation procedure for in the layer of the solar cell. For positive polarity (contact , positive and , negative), the electron flow is from right to left. (a) The measured thermographic signals and are added and subtracted to give and . The signals are proportional to the corresponding local density of heating/cooling and subject to convolution with the experimental point spread function. The integrals needed to calculate in Eq. (10) are presented in the vertically averaged linescan and are marked in (b).

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/content/aip/journal/apl/95/5/10.1063/1.3194156
2009-08-06
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Measurement of the Peltier coefficient of semiconductors by lock-in thermography
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3194156
10.1063/1.3194156
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