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Increasing permittivity in HfZrO thin films by surface manipulation
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10.1063/1.3195623
/content/aip/journal/apl/95/5/10.1063/1.3195623
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3195623

Figures

Image of FIG. 1.
FIG. 1.

XRD and ATR-FTIR spectra of crystalline 10 nm HfZrO films with various compositions. The inset shows the volume fraction of monoclinic phase in dependence of content, as extracted from the XRD measurement.

Image of FIG. 2.
FIG. 2.

ATR-FTIR measurements of bilayer stacks with a total thickness of 8 nm and fractional layer thickness as indicated in the diagram. (a) The topmost layer is . (b) The topmost layer is .

Image of FIG. 3.
FIG. 3.

Dependence of the dielectric constant of HfZrO on content for a film thickness of 8 nm. The fraction is either uniformly distributed or concentrated at the top or bottom of the stack.

Image of FIG. 4.
FIG. 4.

Gibbs free energy difference between the monoclinic and tetragonal phase for and with different surface free energies.

Tables

Generic image for table
Table I.

Bulk parameters and critical thickness used for the thermodynamic model.

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/content/aip/journal/apl/95/5/10.1063/1.3195623
2009-08-04
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Increasing permittivity in HfZrO thin films by surface manipulation
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3195623
10.1063/1.3195623
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