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Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
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10.1063/1.3195684
/content/aip/journal/apl/95/5/10.1063/1.3195684
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3195684
/content/aip/journal/apl/95/5/10.1063/1.3195684
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/content/aip/journal/apl/95/5/10.1063/1.3195684
2009-08-04
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3195684
10.1063/1.3195684
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