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Si regions of XPS spectra corresponding to samples prepared by annealing in 100 mbar of for 1 h at [parts (a) and (b)] and [parts (c) and (d)] of (5 nm) films deposited on the Si [parts (a) and (c)] and C faces [parts (b) and (d)] of . The spectrum obtained from the as-deposited sample prepared on the C face of is also shown [part (e)]. Points represent experimental data. Solid curves correspond to fitting components, background, and their sum. The energy position of components assigned to silicon oxide, , and silicon carbide are indicated. a.u. stands for arbitrary units.
Experimental excitation curves of the nuclear reaction. (40 nm)/SiC structures annealed in (top) 100 mbar of for 1 h at (solid circles), (solid squares), and (open triangles) and (bottom) 100 mbar of for 1 h at (solid squares) and (open triangles) followed by an oxidation step in 100 mbar of for 1h at . Sketches of the sample processing route are shown at the top of the respective figures. The crystallization induced by annealing is represented by a different filling pattern of the film in each sketch.
(Top) XRR experimental data obtained from (40 nm)/(0001) structures as-deposited (open symbols) and annealed in 100 mbar of for 1 h at (solid symbols). film densities obtained from these data are listed. (Bottom) Energy loss spectra of O photoelectrons of the same samples. The curves are offset along the intensity axis for clarity. The band gap was determined by linear extrapolation as shown by the dashed lines. a.u. stands for arbitrary units.
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