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Conduction band intersubband transitions in Ge/SiGe quantum wells
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Image of FIG. 1.
FIG. 1.

Normalized transmission spectra (sample D) (dash-dotted curve) and (solid curve). The absorption peaks due to the dopant hydrogenlike levels in the Si substrate are labeled with P. The inset shows a scheme of the optical path inside the sample. The MQWs position is indicated as well as the Au coating (darker fill pattern).

Image of FIG. 2.
FIG. 2.

Dichroic transmission coefficient for the samples listed in Table I.

Image of FIG. 3.
FIG. 3.

Experimental absorption energies for the samples of Table I (, squares). The transition energies, calculated in the flatband approximation (, dashed line), and including the self-consistent band correction and depolarization shift (, solid line), are reported as a function of the well width.


Generic image for table
Table I.

Characteristics of the samples studied in this work: and are the Ge contents of the virtual substrate and the barrier, respectively; and indicate the width of the wells and the barriers; is the parallel strain in the QW as measured by Raman measurements; and are the absorption energy and the full width at half maximum of the absorption lines, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Conduction band intersubband transitions in Ge/SiGe quantum wells