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High quality AlN for deep UV photodetectors
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10.1063/1.3200229
/content/aip/journal/apl/95/5/10.1063/1.3200229
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3200229

Figures

Image of FIG. 1.
FIG. 1.

AFM image of AlN layers grown in optimized conditions: (a) thick area and (b) thick area.

Image of FIG. 2.
FIG. 2.

(a) AFM image of sample A before etching, (b) AFM image of the same sample after etching in KOH, and (c) AFM image of sample B without IDs.

Image of FIG. 3.
FIG. 3.

characteristic and photograph of MSM PDs.

Image of FIG. 4.
FIG. 4.

Spectral response of MSM PD at bias.

Tables

Generic image for table
Table I.

XRD results for two thick AlN samples used for MSM PDs.

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/content/aip/journal/apl/95/5/10.1063/1.3200229
2009-08-06
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High quality AlN for deep UV photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3200229
10.1063/1.3200229
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