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Resonant photoionization of defects in film stacks observed by second-harmonic generation
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10.1063/1.3202392
/content/aip/journal/apl/95/5/10.1063/1.3202392
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3202392
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TD-EFISH measurements on a 4 nm as-deposited sample for two different incident photon energies. The unique decay of EFISH is resonantly enhanced near the incident photon energy of 1.6 eV (inset).

Image of FIG. 2.
FIG. 2.

TD-EFISH measurements on a 4 nm as-deposited sample at different incident laser powers. (Inset) Log-log scale plot of the EFISH decay vs incident laser power. The slope of indicates a two-photon absorption process and is responsible for EFISH decay mechanism.

Image of FIG. 3.
FIG. 3.

TD-EFISH hysteresis measurements on a 4 nm as-deposited sample. Scan 2 is distinguished from scan 1 by temporarily blocking the incident laser, while the accumulated surface negative charge is wiped clear with methanol. The EFISH decay and hysteresis is not observed for annealed or samples (inset).

Image of FIG. 4.
FIG. 4.

Schematic band diagram representation of the different charge transport mechanisms leading to the TD-EFISH results. The localized 3.2 eV negatively charged defect within is believed to be responsible for the EFISH decay.

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/content/aip/journal/apl/95/5/10.1063/1.3202392
2009-08-06
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resonant photoionization of defects in Si/SiO2/HfO2 film stacks observed by second-harmonic generation
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3202392
10.1063/1.3202392
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