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Correlation of crystalline defects with photoluminescence of InGaN layers
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10.1063/1.3202409
/content/aip/journal/apl/95/5/10.1063/1.3202409
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3202409

Figures

Image of FIG. 1.
FIG. 1.

RCs in the vicinity of (0002) reflection for 100 and 400 nm InGaN layer thickness.

Image of FIG. 2.
FIG. 2.

Reciprocal space maps, measured in the vicinity of reflection for (a) 100 nm and (b) 400nm InGaN thickness structures.

Image of FIG. 3.
FIG. 3.

PL spectra of samples A–D at 70 K.

Tables

Generic image for table
Table I.

Structural parameters of GaN layers from x-ray (0002) RCs.

Generic image for table
Table II.

Structural parameters of InGaN layers from x-ray (0002) RCs.

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/content/aip/journal/apl/95/5/10.1063/1.3202409
2009-08-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation of crystalline defects with photoluminescence of InGaN layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3202409
10.1063/1.3202409
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