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(a) Typical surface AFM images of Al NPs and (b) cross-sectional TEM images of Al NP embedded in the MOS structure, where the shell was clearly shown between Al NP and sputtered gate oxide.
(a) Typical capacitance-voltage curves of MOS structures containing shell-Al core NPs and (b) normalized capacitance-voltage curves with Al NP (red square) and without Al NP (black circle).
Pulsed dynamic capacitance curve with different programming and erasing time.
(a) Data retention time for electron charging (8 V, 10 s) and hole charging (−8 V, 10 s), where the capacitance was monitored at zero gate bias and room temperature and (b) possible energy band diagram of shell-Al core structure containing additional shell.
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