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Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures
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10.1063/1.3202421
/content/aip/journal/apl/95/5/10.1063/1.3202421
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3202421

Figures

Image of FIG. 1.
FIG. 1.

Random and aligned spectra (circles and squares) and simulation (solid line) from RBS/C experiments at 2 MeV. The insets show the aligned spectrum in detail. Windows of the film and the substrate signals for the angular scans are also shown.

Image of FIG. 2.
FIG. 2.

Experimental angular scans across the axis for different energies in strained AlGaInN/GaN (a) and AlInN/GaN (b) HSs. As a reference, the angular scan from the active layer at 2 MeV is shown (top graphics). The horizontal lines mark the value of the real kink angle for both HSs. The shift from the substrate does not match due to steering effects, which gradually diminish with energy.

Image of FIG. 3.
FIG. 3.

Experimental angular shifts and MC predictions for the HSs analyzed as a function of the probing energy.

Tables

Generic image for table
Table I.

In-plane and out-of-plane lattice parameters from RSMs and derived values for tetragonal distortion and kink angle .

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/content/aip/journal/apl/95/5/10.1063/1.3202421
2009-08-07
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3202421
10.1063/1.3202421
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